Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S

Abstract

In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L decrease from 2 to 0.1 μm, this behaviour found expression in a fast increase of the substrate current maximum Isubmax⁡. Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.

Keywords

• Submicrometer MOSFET's
• Impact ionization
• Substrate current
• Temperature
• Channel length.