Active and Passive Electronic Components (Jan 2001)
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
Abstract
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L decrease from 2 to 0.1 μm, this behaviour found expression in a fast increase of the substrate current maximum Isubmax. Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.
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