Moldavian Journal of the Physical Sciences (Jan 2012)

Transport properties of Cu2ZnSnS4

  • Guc, Maxim,
  • Lisunov, Constantin,
  • Nateprov, Alexandr,
  • Levcenco, Sergiu,
  • Tezlevan, Victor,
  • Aruşanov, Ernest

Journal volume & issue
Vol. 11, no. 1-2
pp. 41 – 51

Abstract

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Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.