Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the &#x201C;Thermal-House&#x201D;

Da-Wei Wang; Wenchao Chen; Wen-Sheng Zhao; Guo-Dong Zhu; Kai Kang; Pingqi Gao; Jose E. Schutt-Aine; Wen-Yan Yin

doi:10.1109/ACCESS.2018.2888572

IEEE Access (Jan 2019)

Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the “Thermal-House”

Da-Wei Wang,
Wenchao Chen,
Wen-Sheng Zhao,
Guo-Dong Zhu,
Kai Kang,
Pingqi Gao,
Jose E. Schutt-Aine,
Wen-Yan Yin

Affiliations

Da-Wei Wang: ORCiD; Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science and Electronic Engineering, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China
Wenchao Chen: Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science and Electronic Engineering, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China
Wen-Sheng Zhao: ORCiD; School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Guo-Dong Zhu: Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science and Electronic Engineering, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China
Kai Kang: ORCiD; School of Electronic Engineering, University of Electronic Science and Technology, Chengdu, China
Pingqi Gao: Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
Jose E. Schutt-Aine: College of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, IL, USA
Wen-Yan Yin: Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science and Electronic Engineering, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China

DOI: https://doi.org/10.1109/ACCESS.2018.2888572
Journal volume & issue: Vol. 7
pp. 3897 – 3908

Abstract

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Thermal crosstalk in a highly integrated RRAM array due to the self-heating effect is one of the most critical issues affecting device reliability. In this paper, two types of “thermal-house” structures are proposed to optimize the thermal management of the RRAM array. An in-house developed parallel simulator is employed to study the performance of the proposed thermal house structures in terms of resistance ratio and crosstalk temperature. It is demonstrated that the proposed thermal house structures can help to reduce thermal crosstalk in high-density RRAM arrays. Some suggestions are also provided for further improving the thermal management capability of the thermal houses as well.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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