A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

Abstract

Abstract Preparing the thermal-sensitive thin films with high temperature coefficient of resistance (TCR) and low resistivity by a highly compatible process is favorable for increasing the sensitivity of microbolometers with small pixels. Here, we report an effective and process-compatible approach for preparing V1-x-yTixRuyO2 thermal-sensitive thin films with monoclinic structure, high TCR, and low resistivity through a reactive sputtering process followed by annealing in oxygen atmosphere at 400 °C. X-ray photoelectron spectroscopy demonstrates that Ti4+ and Ru4+ ions are combined into VO2. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy reveal that V1-x-yTixRuyO2 thin films have a monoclinic lattice structure as undoped VO2. But V1-x-yTixRuyO2 thin films exhibit no-SMT feature from room temperature (RT) to 106 °C due to the pinning effect of high-concentration Ti in monoclinic lattice. Moreover, RT resistivity of the V0.8163Ti0.165Ru0.0187O2 thin film is only one-eighth of undoped VO2 thin film, and its TCR is as high as 3.47%/°C.

Keywords

• Vanadium oxide
• Thin films
• Titanium
• Ruthenium
• Thermal-sensitive