Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

Abstract

In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOItechnologyand the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), isanalyzed. It is known [3,4] that the thermal conductivity of GaAs is 3-4 times worse than silicon. To eliminatethis disadvantage, the technology of forming high-speed GaAs-structures on the surface of the silicon substratewas propoused.

Keywords

• арсенід галію, польовий транзистор, тепловий опір, електрофізичне діагностування