Electronics Letters (Mar 2021)
Improving the acousto‐optical interaction by an introduction of a planarisation SiO2 layer
Abstract
Abstract This paper introduces a planarisation SiO2 layer into the configuration of ZnO‐silicon‐on‐insulator for constructing an acoustical resonant cavity to enhance the acoustic density on a silicon‐on‐insulator waveguide. The improved configuration with a planarisation SiO2 layer can increase the acousto‐optical interaction by about three times and 20% compared with acousto‐optical configuration of ZnO pads only in an interdigital transducer region and all over a silicon on insulator. Moreover, an introduction of a planarisation SiO2 layer can reduce acoustic reflection on optical waveguide and optical waveguide loss for an acousto‐optical device on silicon‐on‐insulator optical waveguides.
Keywords