Electronics Letters (Mar 2021)

Improving the acousto‐optical interaction by an introduction of a planarisation SiO2 layer

  • Rongwei Wang,
  • Guofang Fan,
  • Zeping Zhang,
  • Yachao Jing,
  • Muguang Wang,
  • Xiaoyu Cai,
  • Jiasi Wei,
  • Hongyu Li,
  • Yuan Li

DOI
https://doi.org/10.1049/ell2.12013
Journal volume & issue
Vol. 57, no. 5
pp. 223 – 225

Abstract

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Abstract This paper introduces a planarisation SiO2 layer into the configuration of ZnO‐silicon‐on‐insulator for constructing an acoustical resonant cavity to enhance the acoustic density on a silicon‐on‐insulator waveguide. The improved configuration with a planarisation SiO2 layer can increase the acousto‐optical interaction by about three times and 20% compared with acousto‐optical configuration of ZnO pads only in an interdigital transducer region and all over a silicon on insulator. Moreover, an introduction of a planarisation SiO2 layer can reduce acoustic reflection on optical waveguide and optical waveguide loss for an acousto‐optical device on silicon‐on‐insulator optical waveguides.

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