Electrochemistry (Sep 2020)

Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device

  • Shofu MATSUDA,
  • Chikara ITAGAKI,
  • Masamichi ITO,
  • Minoru UMEDA

DOI
https://doi.org/10.5796/electrochemistry.20-64056
Journal volume & issue
Vol. 88, no. 5
pp. 350 – 352

Abstract

Read online

To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivative/triphenylamine derivative/Au, hole injection was improved only at the interface where C60 was introduced. In addition, when 1 mol% of C60 was doped, the energy barrier for the hole injection decreased to 0.06 eV from 0.43 eV. Overall, we successfully developed a device with enhanced rectification properties.

Keywords