4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

Yanjuan Liu; Dezhen Jia; Junpeng Fang

doi:10.3390/mi14050950

Micromachines (Apr 2023)

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

Yanjuan Liu,
Dezhen Jia,
Junpeng Fang

Affiliations

Yanjuan Liu: College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China
Dezhen Jia: College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China
Junpeng Fang: School of Integrated Circuits, Tsinghua University, Beijing 100084, China

DOI: https://doi.org/10.3390/mi14050950
Journal volume & issue: Vol. 14, no. 5
p. 950

Abstract

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In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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