Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
Shiben Hu,
Kuankuan Lu,
Honglong Ning,
Rihui Yao,
Yanfen Gong,
Zhangxu Pan,
Chan Guo,
Jiantai Wang,
Chao Pang,
Zheng Gong,
Junbiao Peng
Affiliations
Shiben Hu
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Kuankuan Lu
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
Honglong Ning
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
Rihui Yao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
Yanfen Gong
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Zhangxu Pan
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Chan Guo
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Jiantai Wang
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Chao Pang
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Zheng Gong
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Junbiao Peng
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.
