Nanomaterials (Feb 2021)

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

  • Shiben Hu,
  • Kuankuan Lu,
  • Honglong Ning,
  • Rihui Yao,
  • Yanfen Gong,
  • Zhangxu Pan,
  • Chan Guo,
  • Jiantai Wang,
  • Chao Pang,
  • Zheng Gong,
  • Junbiao Peng

DOI
https://doi.org/10.3390/nano11020522
Journal volume & issue
Vol. 11, no. 2
p. 522

Abstract

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In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

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