Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

R. Alcotte; M. Martin; J. Moeyaert; R. Cipro; S. David; F. Bassani; F. Ducroquet; Y. Bogumilowicz; E. Sanchez; Z. Ye; X. Y. Bao; J. B. Pin; T. Baron

doi:10.1063/1.4945586

APL Materials (Apr 2016)

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

R. Alcotte,
M. Martin,
J. Moeyaert,
R. Cipro,
S. David,
F. Bassani,
F. Ducroquet,
Y. Bogumilowicz,
E. Sanchez,
Z. Ye,
X. Y. Bao,
J. B. Pin,
T. Baron

Affiliations

R. Alcotte: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
M. Martin: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
J. Moeyaert: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
R. Cipro: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
S. David: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
F. Bassani: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
F. Ducroquet: Univ. Grenoble Alpes, IMEP-LAHC, F-38000 Grenoble, France and CNRS, IMEP-LAHC, F-38000 Grenoble, France
Y. Bogumilowicz: Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
E. Sanchez: Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA
Z. Ye: Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA
X. Y. Bao: Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA
J. B. Pin: Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA
T. Baron: Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France

DOI: https://doi.org/10.1063/1.4945586
Journal volume & issue: Vol. 4, no. 4
pp. 046101 – 046101-6

Abstract

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Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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