RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR

Abstract

When developing a technology of power device’s structure generation the breakdown voltage and the resistance of silicon substrate are constitutive parameters. Modern generation methods allow to create a structure based on fragile materials which behavior directly depends on the breakdown voltage and the resistance of chosen materials in the depth of structure. In this paper the work on determination the crystal’s channel resistance dependence of its structural parameters for the average high-voltage BSIT is done.

Keywords

• breakdown voltage
• structural resistance
• generation technology
• structural parameters
• silicon substrate