EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON

Abstract

ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning electron microscopy. It was demonstrated the porous buffer layer provides improving the quality of the films compared with films deposited on the monolithic silicon.

Keywords

• эпитаксиальные пленки
• селенид цинка
• пористый кремний