Richardson-Schottky transport mechanism in ZnS nanoparticles
Hassan Ali,
Usman Khan,
M. A. Rafiq,
Attia Falak,
Adeela Narain,
Tang Jing,
Xiulai Xu
Affiliations
Hassan Ali
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Usman Khan
University of the Punjab, Quaid-e-Azam Campus, Lahore 54000, Pakistan
M. A. Rafiq
Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences, P.O. Nilore, Islamabad 45650, Pakistan
Attia Falak
University of the Punjab, Quaid-e-Azam Campus, Lahore 54000, Pakistan
Adeela Narain
University of the Punjab, Quaid-e-Azam Campus, Lahore 54000, Pakistan
Tang Jing
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Xiulai Xu
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.
