Atomristor Mott Theory of Sn Adatom Adlayer on a Si Surface

Abstract

We use a combination of density functional theory (DFT) and dynamical mean field theory (DMFT) to unveil orbital field-induced electronic structure reconstruction of the atomic Sn layer deposited onto a Si(111) surface (Sn/Si(111)−3×3R30∘), also referred to as α-Sn. Our DFT + DMFT results indicate that α-Sn is an ideal testing ground to explore electric field-driven orbital selectivity and Mott memory behavior, all arising from the close proximity of α-Sn to metal insulator transitions. We discuss the relevance of orbital phase changes for α-Sn in the context of the current–voltage (I−V) characteristic for future silicon-based metal semiconductor atomristors.

Keywords

• Hubbard model
• DFT + DMFT
• metal–insulator transition
• atomristor
• current–voltage