Nature Communications (Jul 2022)
Low-defect-density WS2 by hydroxide vapor phase deposition
- Yi Wan,
- En Li,
- Zhihao Yu,
- Jing-Kai Huang,
- Ming-Yang Li,
- Ang-Sheng Chou,
- Yi-Te Lee,
- Chien-Ju Lee,
- Hung-Chang Hsu,
- Qin Zhan,
- Areej Aljarb,
- Jui-Han Fu,
- Shao-Pin Chiu,
- Xinran Wang,
- Juhn-Jong Lin,
- Ya-Ping Chiu,
- Wen-Hao Chang,
- Han Wang,
- Yumeng Shi,
- Nian Lin,
- Yingchun Cheng,
- Vincent Tung,
- Lain-Jong Li
Affiliations
- Yi Wan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
- En Li
- Department of Physics, The Hong Kong University of Science and Technology
- Zhihao Yu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
- Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales
- Ming-Yang Li
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
- Ang-Sheng Chou
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
- Yi-Te Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University
- Chien-Ju Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University
- Hung-Chang Hsu
- Department of Physics, National Taiwan University
- Qin Zhan
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University
- Areej Aljarb
- Department of Physics, King Abdulaziz University (KAAU)
- Jui-Han Fu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
- Shao-Pin Chiu
- Department of Electrophysics, National Yang Ming Chiao Tung University
- Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Juhn-Jong Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University
- Ya-Ping Chiu
- Department of Physics, National Taiwan University
- Wen-Hao Chang
- Department of Electrophysics, National Yang Ming Chiao Tung University
- Han Wang
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
- Yumeng Shi
- School of Electronics and Information Engineering, Shenzhen University
- Nian Lin
- Department of Physics, The Hong Kong University of Science and Technology
- Yingchun Cheng
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University
- Vincent Tung
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
- Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong
- DOI
- https://doi.org/10.1038/s41467-022-31886-0
- Journal volume & issue
-
Vol. 13,
no. 1
pp. 1 – 8
Abstract
Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS2 with reduced defect density and electrical properties comparable to those of exfoliated flakes.
