Photosensitivity spectrums of Ni-n-GaAs surface-barrier structures

Abstract

The paper presents research results on the photosensitivity spectra of the obtained Ni-n-GaAs structures in the photon energy range 0.9 ... 2.3 eV when the side covered with translucent nickel layer is illuminated. It has been experimentally established for the first time that photons with energy 0.9 ... 1.25 eV do not create excited electrons in the Ni layer, and electron emission from Ni does not occur in GaAs. The prospects of application of Ni-n-GaAs photosensitive structures to create solar cells are shown.

Keywords

• photosensitivity
• metal semiconductor
• nikel
• structure
• chemical method
• photocurrent
• lighting
• semitransparent layer
• infrared