Bismuth-doping induced red-shifted spectral response of homo-epitaxial MAPbBr3 photodiodes
Yubing Xu,
Xin Wang,
Yuzhu Pan,
ShunJie Chai,
Jie Wu,
Mengrou Wang,
Abida Perveen,
Damian Chinedu Onwudiwe,
Razika Zair Talaighil,
Byung Seong Bae,
Ying Zhu,
Jing Chen,
Wei Lei
Affiliations
Yubing Xu
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Xin Wang
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Yuzhu Pan
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
ShunJie Chai
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Jie Wu
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Mengrou Wang
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Abida Perveen
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Damian Chinedu Onwudiwe
Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
Razika Zair Talaighil
Institute of Electrical and Electronic Engineering, M’hamed Bougara University of Boumerdes, Boumerdes 35000, Algeria
Byung Seong Bae
Department of Electronics and Display Engineering, Hoseo University, Hoseo Ro 79, Asan City, Chungnam 31499, Republic of Korea
Ying Zhu
E-xray Electronic Co. Ltd., Suzhou, China
Jing Chen
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Wei Lei
School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
Perovskite single crystals (PSCs) photodiodes with p–n junctions have been widely studied due to their effective blocking of injected current with barriers and quickly separating the electrons and hole pairs with a built-in electric field. Here, we report a solution-processed epitaxial (SPE) growth method to fabricate p–n photodiodes based on MAPbBr3 PSCs. In the structure of the MAPbBr3 PSCs, bismuth donor doping will change the conduction type from p-type to n-type and redshift the absorption edge along with the increase in Bi concentration. Therefore, this work successfully fabricates the p–n photodiodes with homo-epitaxial Bi-doped (n-type) MAPbBr3 layers grown on the surface of undoped (p-type) MAPbBr3 PSCs substrates through the SPE growth method. The p–n photodiodes achieve a tunable spectral response by simply adjusting the Bi doping concentrations of homo-epitaxial MAPbBr3 layers. The spectral response peaks redshift from 559 to 601 nm, with an increasing Bi doping level of 0% to 15%.
