Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors

Abstract

It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for predicting the threshold voltage of ion-implanted field-effect transistors using capacitance-voltage measurements prior to contact formation is proposed.

Keywords

• gallium arsenide
• field-effect transistor
• Schottky barrier
• threshold voltage
• capacitance-voltage characteristic