Nature Communications (Apr 2018)

Strain-engineered inverse charge-funnelling in layered semiconductors

  • Adolfo De Sanctis,
  • Iddo Amit,
  • Steven P. Hepplestone,
  • Monica F. Craciun,
  • Saverio Russo

DOI
https://doi.org/10.1038/s41467-018-04099-7
Journal volume & issue
Vol. 9, no. 1
pp. 1 – 7

Abstract

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The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.