Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Youngjun Park; Seong Hun Kim; Donghwa Lee; Jang-Sik Lee

doi:10.1038/s41467-021-23871-w

Nature Communications (Jun 2021)

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Youngjun Park,
Seong Hun Kim,
Donghwa Lee,
Jang-Sik Lee

Affiliations

Youngjun Park: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
Seong Hun Kim: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
Donghwa Lee: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
Jang-Sik Lee: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)

DOI: https://doi.org/10.1038/s41467-021-23871-w
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 8

Abstract

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Halide perovskite has been applied for resistive switching memory devices, but there are challenges remained to achieve practical application. By using high-throughput screening based on first-principles calculations, the authors discover that lead-free dimer-Cs3Sb2I9 meets the requirements, which exhibits switching speed of 20 ns.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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