The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors

Abstract

BaTiO3 (BT) was successfully produced on a Fluorine doped tin oxide (FTO) substrate using the sol-gel method by adding Zirconium (Zr) according to the stoichiometric equation BaZrxTi1-xO3 (BZT) at compositions x = 0.4 and x = 0.6. This research aims to increase the capacitance and dielectric constant of BZT as a capacitor. BZT thin films were annealed for 2 h at 800 °C with heating rates of 5 °C/min and 10 °C/min. Based on the results, variations in the heating rate affect the size of the sample, the capacitance, and the dielectric constant values. The films were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Impedance Spectroscopy. XRD results obtained the same plane peaks, but 2θ different angles indicate tetragonal plane structure. According to SEM characterization with 50,000 times magnification, the sample with composition x = 0.4 had an average grain size of 0.36 μm ± 0.11 and 0.32 μm ± 0.08 at a heating rate of 5 °C/min and 10 °C/min, respectively. Samples with composition x = 0.6 at a heating rate of 5 °C/min had an average grain size of 0.33 μm ± 0.09 and 0.18 μm ± 0.01 at a heating rate of 10 °C/min. Impedance spectroscopy characterization, the capacitance value for a frequency of 0.1 Hz, composition x = 0.4 with a heating rate of 5 °C/min and 10 °C/min has a value greater than composition x = 0.6 at the same heating rates. Furthermore, the dielectric constant value for a frequency of 0.1 Hz, composition x = 0.4 with a heating rate of 5 °C/min and 10 °C/min is more significant than composition x = 0.6.

Keywords

• BZT thin films
• Sol-gel method
• Heating rate
• Capacitance