A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO2 and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO2 substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device.
