Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

• Jian Yin,
• David Hwang,
• Hossein Zamani Siboni,
• Ehsanollah Fathi,
• Reza Chaji,
• Dayan Ban

Affiliations

Jian Yin

Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo

David Hwang

Vuereal InC

Hossein Zamani Siboni

Vuereal InC

Ehsanollah Fathi

Vuereal InC

Reza Chaji

Vuereal InC

Dayan Ban

Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo