The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

Penghui He; Hua Xu; Linfeng Lan; Caihao Deng; Yongbo Wu; Yilong Lin; Siting Chen; Chunchun Ding; Xiao Li; Miao Xu; Junbiao Peng

doi:10.1038/s43246-021-00193-4

Communications Materials (Aug 2021)

The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

Penghui He,
Hua Xu,
Linfeng Lan,
Caihao Deng,
Yongbo Wu,
Yilong Lin,
Siting Chen,
Chunchun Ding,
Xiao Li,
Miao Xu,
Junbiao Peng

Affiliations

Penghui He: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Hua Xu: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Linfeng Lan: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Caihao Deng: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Yongbo Wu: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Yilong Lin: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Siting Chen: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Chunchun Ding: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Xiao Li: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Miao Xu: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Junbiao Peng: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

DOI: https://doi.org/10.1038/s43246-021-00193-4
Journal volume & issue: Vol. 2, no. 1
pp. 1 – 10

Abstract

Read online

Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photostability of devices.

Published in Communications Materials

ISSN: 2662-4443 (Online)
Publisher: Nature Portfolio
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/commsmat/

About the journal