Opto-Electronic Advances (Sep 2023)

ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

  • Maria Baeva,
  • Dmitry Gets,
  • Artem Polushkin,
  • Aleksandr Vorobyov,
  • Aleksandr Goltaev,
  • Vladimir Neplokh,
  • Alexey Mozharov,
  • Dmitry V. Krasnikov,
  • Albert G. Nasibulin,
  • Ivan Mukhin,
  • Sergey Makarov

DOI
https://doi.org/10.29026/oea.2023.220154
Journal volume & issue
Vol. 6, no. 9
pp. 1 – 14

Abstract

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Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture. Here, we develop a perovskite electrochemical cell both for light emission and detection, where the active layer consists of a composite material made of halide perovskite microcrystals, polymer support matrix, and added mobile ions. The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition, emitting light at the wavelength of 523 nm, yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 1.3×105 lm/W. The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates. Moreover, the device operates as a photodetector with a sensitivity up to 0.75 A/W, specific detectivity of 8.56×1011 Jones, and linear dynamic range of 48 dB. The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50 μm.

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