Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Zhangbao Peng; Weijie Guo; Tingzhu Wu; Ziquan Guo; Yijun Lu; Yicheng Zheng; Yue Lin; Zhong Chen

doi:10.1109/JPHOT.2019.2958311

IEEE Photonics Journal (Jan 2020)

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Zhangbao Peng,
Weijie Guo,
Tingzhu Wu,
Ziquan Guo,
Yijun Lu,
Yicheng Zheng,
Yue Lin,
Zhong Chen

Affiliations

Zhangbao Peng: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Weijie Guo: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Tingzhu Wu: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Ziquan Guo: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Yijun Lu: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Yicheng Zheng: Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Yue Lin: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China
Zhong Chen: ORCiD; Department of Electronic Science, Fujian Engineering Research Center for Solid State Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China

DOI: https://doi.org/10.1109/JPHOT.2019.2958311
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 8

Abstract

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We investigate temperature-dependent carrier transfer and efficiency droop on AlGaN-based deep ultraviolet light-emitting diodes. The Shockley-Read-Hall (SRH) recombination and carrier leakage are highly associated with the poor thermal stability. The existence of Auger recombination and carrier leakage is identified by the m-power method. A modified ABC model with an additional term f(n) related to carrier leakage is employed to analyze the evolution of multiple recombination mechanisms. The SRH process strongly suppresses both Auger recombination and carrier leakage at low currents. At high currents, the latter two processes are responsible for the efficiency droop and exhibit an anti-correlation upon temperature.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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