Science of Sintering (Jan 2021)

Fast oxide-ion conductors in Bi2O3-V2O5 system: Bi108-xVxO162+x(x=4-9) with 3×3×3 superstructure

  • Dapčević A.,
  • Radojković A.,
  • Žunić M.,
  • Počuča-Nešić M.,
  • Milošević O.,
  • Branković G.

DOI
https://doi.org/10.2298/SOS2101055D
Journal volume & issue
Vol. 53, no. 1
pp. 55 – 66

Abstract

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In this study, the possibility to stabilize O2-ion conductors in Bi2O3-V2O5 system was investigated. Six pseudo-binary Bi2O3-V2O5 mixtures [3.50 < x(V2O5) < 8.50 mol%] were thermally treated at 1000°C for 1 h. The samples were characterized by XRD, HRTEM/SAED, DTA and EIS techniques. The high-temperature reaction between α Bi2O3 and V2O5 resulted in formation of microcrystalline single-phase specimens containing the phase based on δ-Bi2O3 if V2O5 content was ≥ 4.63 mol%. The obtained phases exhibited main diffraction peaks corresponding to the simple cubic δ-Bi2O3 (space group Fm-3m) but Rietveld refinement showed a threefold repeat on a simple cubic sublattice indicating that the true unit cell is 3×3×3 supercell. Within proposed supercell, the octahedrally coordinated V5+ ions fully occupy 4a Wyckoff position and partially occupy 32f. The Bi3+ ions are placed at the rest of 32f and at 24e and 48h with full occupation. In total, 22 % of anionic sites are vacant. The ionic conductivity of phase with the lowest dopant content, i.e. Bi 103V5O167, amounts 0.283 S cm-1 at 800°C with the activation energy of 0.64(5) eV, which is comparable to the undoped δ-Bi2O3 known as the fastest ion conductor.

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