Aluminum Josephson junction microstructure and electrical properties modified by thermal annealing

Abstract

Abstract Reproducibility of Al/AlOx/Al Josephson junctions is a challenge for scaling up superconducting quantum processors. The frequency uncertainty of the transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction microstructure and electrical properties. Here, we present a solution for this problem using the post-fabrication Josephson junction thermal annealing process. The developed thermal post-exposure method allows not only to increase the junction resistance by 175%, but also to decrease by 60% with a step of 10% in Rn, which opens up new possibilities for tuning the frequency of qubits. The resistance is shown to be strongly temperature dependent, and is weakly dependent on the holding time. The linear dimensions of the electrodes and the sidewalls contribution to the total JJ area also have a significant impact on the final resistance after annealing. Finally, a theoretical model of the structure modification in a tunnel barrier with changes in oxygen concentration gradient is proposed. The proposed thermal annealing approach can be used to form stable and reproducible tunnel barriers and scalable frequency trimming for widely used fixed-frequency transmon qubits.