Polarization Enhanced GaN Avalanche Photodiodes With p-type In0.05Ga0.95N Layer

Haiping Wang; Haifan You; Danfeng Pan; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

doi:10.1109/JPHOT.2020.2969991

IEEE Photonics Journal (Jan 2020)

Polarization Enhanced GaN Avalanche Photodiodes With p-type In0.05Ga0.95N Layer

Haiping Wang,
Haifan You,
Danfeng Pan,
Dunjun Chen,
Hai Lu,
Rong Zhang,
Youdou Zheng

Affiliations

Haiping Wang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Haifan You: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Danfeng Pan: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Dunjun Chen: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Hai Lu: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Youdou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2020.2969991
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 6

Abstract

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In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In0.05Ga0.95N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In0.05Ga0.95N layer generates a negative polarization charge at the p-In0.05Ga0.95N/i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the p-In0.05Ga0.95N layer is obtained due to the smaller activation energy of the Mg dopant. Induced polarization charge and increased hole concentration work together to reduce the voltage drop in the p-In0.05Ga0.95N layer and enhance the electric field intensity in the i-GaN layer. The calculated results show that the heterostructure APD demonstrates a reduced operating voltage of more than 26 V and an improved multiplication gain by an order of magnitude in comparison to the conventional one.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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