MemCAM: A Hybrid Memristor-CMOS CAM Cell for On-Chip Caches

Abstract

Non-volatile nanoscale memory devices (such as memristors) have promised to overcome the challenges of scalability and leakage currents of CMOS based memory devices. These novel memories can be fabricated in back-end-of-the-line of any CMOS process. Currently, a lot of research is focused on investigating the benefits of memristors for associative memories. These are Content-Addressable Memories (CAM) in which search based data access takes place. Searching for a particular bit in memristor is time consuming while search in CMOS CAM zone is efficient. To combine the speed and ease of search of CMOS memory and the scalability of memristor memory, we present a novel multibit hybrid CMOS-Memristor Associative Memory Cell. The benefits of such memory cells manifest in on-chip caches - the instruction and data cache, Branch Target Buffer, and Translation Lookaside Buffer. To exemplify the benefit of the cell further, we also simulate the MemCAM as the TLB of an ARM processor and obtained upto 50% decrease in miss rates of Data TLB and upto 93% in that of Instruction TLB. Average speedup of 1.16 was also achieved on various benchmark applications of PARCSEC and MiBench suites.

Keywords

• Memristor content-addressable memory
• memristor crossbar
• translation lookaside buffer
• miss rate reduction