Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Yuan Li; Zhi Cheng Zhang; Jiaqiang Li; Xu-Dong Chen; Ya Kong; Fu-Dong Wang; Guo-Xin Zhang; Tong-Bu Lu; Jin Zhang

doi:10.1038/s41467-022-32380-3

Nature Communications (Aug 2022)

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Yuan Li,
Zhi Cheng Zhang,
Jiaqiang Li,
Xu-Dong Chen,
Ya Kong,
Fu-Dong Wang,
Guo-Xin Zhang,
Tong-Bu Lu,
Jin Zhang

Affiliations

Yuan Li: MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology
Zhi Cheng Zhang: MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology
Jiaqiang Li: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Xu-Dong Chen: MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology
Ya Kong: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Fu-Dong Wang: MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology
Guo-Xin Zhang: MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology
Tong-Bu Lu: MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology
Jin Zhang: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University

DOI: https://doi.org/10.1038/s41467-022-32380-3
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 9

Abstract

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Realizing fast nonvolatile floating gate memories is constrained by the slow tunnelling mechanism for charge injection. Here, Chen et al. demonstrate operation speed of 20 ns and power consumption of 10 fJ using graphdiyne oxide as a threshold switching layer instead of a dielectric blocking layer.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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