Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide

Yali Yu; Tao Xiong; Zhengfeng Guo; Shijun Hou; Juehan Yang; Yue-Yang Liu; Honggang Gu; Zhongming Wei

Fundamental Research (Nov 2022)

Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide

Yali Yu,
Tao Xiong,
Zhengfeng Guo,
Shijun Hou,
Juehan Yang,
Yue-Yang Liu,
Honggang Gu,
Zhongming Wei

Affiliations

Yali Yu: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Tao Xiong: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhengfeng Guo: State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Shijun Hou: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Juehan Yang: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yue-Yang Liu: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Honggang Gu: State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Zhongming Wei: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding author.

Journal volume & issue: Vol. 2, no. 6
pp. 985 – 992

Abstract

Read online

Tin selenide (SnSe) has attracted considerable interest recently on account of its low-symmetry lattice structure, great compatibility with key semiconductor technology, and remarkable electrical and optical performance. SnSe-based polarization-sensitive photodetectors show promising application prospects because of their fast response and excellent photoelectric performance. Here, an in-plane anisotropic SnSe nanosheet was synthesized and reported in detail by applying angle-resolved polarized Raman spectroscopy (ARPRS), polarization-resolved optical microscopy(PROM), angle-resolved optical absorption spectroscopy (AROAS), and other crystal structure characterization methods. Moreover, SnSe crystals exhibit superior polarization detection performance with a high anisotropic photocurrent ratio (2.31 at 1064 nm) due to the structure formed by the Van der Waals superposition of covalently bonded atomic layers. Furthermore, SnSe-based photodetectors have high responsivity (9.27 A/W), high detectivity (4.08 × 1010 Jones), and fast response (in the order of nanoseconds). These results suggest a new method for fabricating 2D fast-response polarization-sensitive photodetectors in the future.

Published in Fundamental Research

ISSN: 2667-3258 (Online)
Publisher: KeAi Communications Co. Ltd.
Country of publisher: China
LCC subjects: Science: Science (General)
Website: https://www.keaipublishing.com/en/journals/fundamental-research/

About the journal

Abstract

Keywords