Defect-Rich Monolayer MoS<sub>2</sub> as a Universally Enhanced Substrate for Surface-Enhanced Raman Scattering
Shiyu Sun,
Jingying Zheng,
Ruihao Sun,
Dan Wang,
Guanliang Sun,
Xingshuang Zhang,
Hongyu Gong,
Yong Li,
Meng Gao,
Dongwei Li,
Guanchen Xu,
Xiu Liang
Affiliations
Shiyu Sun
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Jingying Zheng
College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
Ruihao Sun
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Dan Wang
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Guanliang Sun
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Xingshuang Zhang
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Hongyu Gong
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Yong Li
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Meng Gao
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Dongwei Li
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Guanchen Xu
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Xiu Liang
Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Monolayer 2H-MoS2 has been widely noticed as a typical transition metal dichalcogenides (TMDC) for surface-enhanced Raman scattering (SERS). However, monolayer MoS2 is limited to a narrow range of applications due to poor detection sensitivity caused by the combination of a lower density of states (DOS) near the Fermi energy level as well as a rich fluorescence background. Here, surfaced S and Mo atomic defects are fabricated on a monolayer MoS2 with a perfect lattice. Defects exhibit metallic properties. The presence of defects enhances the interaction between MoS2 and the detection molecule, and it increases the probability of photoinduced charge transfer (PICT), resulting in a significant improvement of Raman enhancement. Defect-containing monolayer MoS2 enables the fluorescence signal of many dyes to be effectively burst, making the SERS spectrum clearer and making the limits of detection (LODs) below 10−8 M. In conclusion, metallic defect-containing monolayer MoS2 becomes a promising and versatile substrate capable of detecting a wide range of dye molecules due to its abundant DOS and effective PICT resonance. In addition, the synergistic effect of surface defects and of the MoS2 main body presents a new perspective for plasma-free SERS based on the chemical mechanism (CM), which provides promising theoretical support for other TMDC studies.