Enhanced photosensitivity in a hybrid WSe2/2DEG heterojunction using a buried TiO2 photosensitive layer

Wentai Zhu; Xinyue Zhang; YuanYuan Liu; Guangyao Sun; Guozhen Liu; Ju Gao; Zenghua Cai; Yucheng Jiang; Run Zhao

doi:10.1088/2053-1591/ad4baa

Materials Research Express (Jan 2024)

Enhanced photosensitivity in a hybrid WSe2/2DEG heterojunction using a buried TiO2 photosensitive layer

Wentai Zhu,
Xinyue Zhang,
YuanYuan Liu,
Guangyao Sun,
Guozhen Liu,
Ju Gao,
Zenghua Cai,
Yucheng Jiang,
Run Zhao

Affiliations

Wentai Zhu: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
Xinyue Zhang: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
YuanYuan Liu: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
Guangyao Sun: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
Guozhen Liu: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
Ju Gao: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China; School for Optoelectronic Engineering, Zaozhuang University , Zaozhuang 277160, People’s Republic of China
Zenghua Cai: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
Yucheng Jiang: Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China
Run Zhao: ORCiD; Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology , Suzhou, 215009, People’s Republic of China

DOI: https://doi.org/10.1088/2053-1591/ad4baa
Journal volume & issue: Vol. 11, no. 5
p. 056404

Abstract

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In this study, we integrated the wide-bandgap material TiO _2 as a photosensitive layer with the WSe _2 /2DEG heterostructure, creating a hybrid WSe _2 /TiO _2 /2DEG heterojunction. This hybrid structure significantly improves the device’s photosensitivity, exhibiting a high rectification effect and a switching ratio of 10 ^3 . The photodetector shows excellent performance, with a responsivity of 0.61 A W ^−1 and a detectivity of up to 1.1×10 ^11 Jones at 405 nm, along with a very fast photoresponse speed. The buried TiO _2 channel allows photogenerated electrons to easily flow through the reduced barrier at the depleted region. This hybrid heterojunction holds promise for the development of high-performance photoelectric devices.

Published in Materials Research Express

ISSN: 2053-1591 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology
Website: https://iopscience.iop.org/journal/2053-1591

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