Cuprous oxide (Cu2O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu2O thin films to 300 °C by intentionally controlling solely the kinetic parameter (total chamber pressure, Ptot) at fixed thermodynamic condition (0.25 mTorr pO2). A strong non-monotonic effect of Ptot on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu2O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.
