GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption
Hassen Dakhlaoui,
Walid Belhadj,
Haykel Elabidi,
Fatih Ungan,
Bryan M. Wong
Affiliations
Hassen Dakhlaoui
Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), Physics Department, College of Science of Dammam, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam 31441, Saudi Arabia
Walid Belhadj
Physics Department, Faculty of Applied Science, Umm AL-Qura University, P.O. Box 715, Makkah 21955, Saudi Arabia
Haykel Elabidi
Physics Department, Faculty of Applied Science, Umm AL-Qura University, P.O. Box 715, Makkah 21955, Saudi Arabia
Fatih Ungan
Department of Physics, Faculty of Science, Sivas Cumhuriyet University, 58140 Sivas, Turkey
Bryan M. Wong
Materials Science & Engineering Program, Department of Chemistry, and Department of Physics & Astronomy, University of California-Riverside, Riverside, CA 92521, USA
We present the first detailed study of optical absorption coefficients (OACs) in a GaAs quantum dot confined with a Woods–Saxon potential containing a hydrogenic impurity at its center. We use a finite difference method to solve the Schrödinger equation within the framework of the effective mass approximation. First, we compute energy levels and probability densities for different parameters governing the confining potential. We then calculate dipole matrix elements and energy differences, E1p−E1s, and discuss their role with respect to the OACs. Our findings demonstrate the important role of these parameters in tuning the OAC to enable blue or red shifts and alter its amplitude. Our simulations provide a guided path to fabricating new optoelectronic devices by adjusting the confining potential shape.
