Wafer-Scale Ag2S-Based Memristive Crossbar Arrays with Ultra-Low Switching-Energies Reaching Biological Synapses

Abstract

Highlights Wafer-scale integration of Ag2S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C. A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in wafer-scale CMOS-compatible memristive units were achieved. The energy-efficient resistance switching was enabled by self-supply of mobile Ag+ ions in Ag2S electrolytes and low silver-nucleation barrier at Ag/Ag2S interface.

Keywords

• Wafer-scale Ag2S films
• Reactive sputter
• Silver nucleation
• Ag+ migration
• Energy-efficient neuromorphic computing