Multi-Directional Displacement Threshold Energy and Crystal Irradiation Damage Model

Abstract

Subject to intense high-energy particle irradiation, various effects manifest within a material. Specifically, when high-energy particles collide with lattice atoms in a crystal material, a sequence of interactions is set in motion, initiating irradiation effects. Using GaAs solar cells as an example, this study investigates how potential barriers in different directions of atoms in sphalerite structures affect atomic displacement and establishes a probability model for lattice atomic displacement under proton irradiation. By combining Markov chains, changes in displacement threshold energy with different crystal orientations are described, and a damage model for cascading collision relationships that cause irradiation effects is established. Finally, the new model is compared to classical models, and differences in defects caused by proton impacts at several energies on GaAs crystals are simulated.

Keywords

• irradiation damage
• crystal threshold energy
• atomic displacement probability
• cascading collision process
• Markov process