A CMOS Compatible Ultracompact Silicon Photonic Optical Add-Drop Multiplexer with Misaligned Sidewall Bragg Gratings

Md Ghulam Saber; Zhenping Xing; David Patel; Eslam El-Fiky; Nicolas Abadia; Yun Wang; Maxime Jacques; M. Morsy-Osman; David V. Plant

doi:10.1109/JPHOT.2017.2703857

IEEE Photonics Journal (Jan 2017)

A CMOS Compatible Ultracompact Silicon Photonic Optical Add-Drop Multiplexer with Misaligned Sidewall Bragg Gratings

Md Ghulam Saber,
Zhenping Xing,
David Patel,
Eslam El-Fiky,
Nicolas Abadia,
Yun Wang,
Maxime Jacques,
M. Morsy-Osman,
David V. Plant

Affiliations

Md Ghulam Saber: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
Zhenping Xing: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
David Patel: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
Eslam El-Fiky: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
Nicolas Abadia: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
Yun Wang: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
Maxime Jacques: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
M. Morsy-Osman: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada
David V. Plant: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada

DOI: https://doi.org/10.1109/JPHOT.2017.2703857
Journal volume & issue: Vol. 9, no. 3
pp. 1 – 10

Abstract

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We experimentally and via simulations demonstrate ultracompact single-stage and cascaded optical add-drop multiplexers using misaligned sidewall Bragg grating in a Mach-Zehnder interferometer for the silicon-on-insulator platform. The single-stage configuration has a device footprint of 400 μm × 90 μm, and the cascaded configuration has a footprint of 400 μm × 125 μm. The proposed designs have 3-dB bandwidths of 6 nm and extinction ratios of 25 dB and 51 dB, respectively, and have been fabricated for the transverse electric mode. A minimum lithographic feature size of 80 nm is used in our design, which is within the limitation of 193 nm deep ultraviolet lithography.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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