RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors

Abstract

Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen). The dependences of the DC selfbias potential on the RF voltage applied to the electrode have been found. The radial profiles of the ion current density to the processed surface and their behavior with the discharge parameters change are presented for various gases. The experimental data are compared to the numerical simulation results obtained using the OOPIC code.

Keywords

• HF capacitive discharge
• plasma-chemical etching of semiconductor materials
• plasma-chemical reactor