AIP Advances (Nov 2023)

Elasto-thermoelectronic diffusion waves with changing thermal conductivity and thermal heating of microtemperature semiconductor

  • Merfat H. Raddadi,
  • Shreen El-Sapa,
  • Abdulkafi M. Saeed,
  • Alaa A. El-Bary,
  • Khaled Lotfy

DOI
https://doi.org/10.1063/5.0174856
Journal volume & issue
Vol. 13, no. 11
pp. 115115 – 115115-14

Abstract

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This paper presents a theoretical investigation of linear thermal conductivity temperature-dependent coupled elasto-thermoelectronic diffusion (ETD) waves in a micro-temperature semiconductor, specifically focusing on the effects of photo-excited processes. The governing equations are formulated for a semi-infinite silicon wafer, which serves as a semiconductor material. The explicit study of the strong coupling between the equations governing elastic wave transport, carrier (plasma) transport, and thermal wave transport is conducted in the presence of microtemperature influence. The electron–hole interaction is obtained within the framework of the ETD theory. Laplace transform is used to resolve the governing equations in a non-dimensional framework for thermoelastic and electronic deformation in one-dimensional (1D) scenarios. The present study employs the proposed model to analyze the impact of ramp-type heating on a stationary plane of unbounded semiconductor material. Thermoelastic electronic coupling is found to be affected by the presence of variable thermal conductivity and microtemperature parameters.