Nanomaterials (Jun 2024)

Influence of Hole Transport Layers on Buried Interface in Wide-Bandgap Perovskite Phase Segregation

  • Fangfang Cao,
  • Liming Du,
  • Yongjie Jiang,
  • Yangyang Gou,
  • Xirui Liu,
  • Haodong Wu,
  • Junchuan Zhang,
  • Zhiheng Qiu,
  • Can Li,
  • Jichun Ye,
  • Zhen Li,
  • Chuanxiao Xiao

DOI
https://doi.org/10.3390/nano14110963
Journal volume & issue
Vol. 14, no. 11
p. 963

Abstract

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Light-induced phase segregation, particularly when incorporating bromine to widen the bandgap, presents significant challenges to the stability and commercialization of perovskite solar cells. This study explores the influence of hole transport layers, specifically poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) and [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), on the dynamics of phase segregation. Through detailed characterization of the buried interface, we demonstrate that Me-4PACz enhances perovskite photostability, surpassing the performance of PTAA. Nanoscale analyses using in situ Kelvin probe force microscopy and quantitative nanomechanical mapping techniques elucidate defect distribution at the buried interface during phase segregation, highlighting the critical role of substrate wettability in perovskite growth and interface integrity. The integration of these characterization techniques provides a thorough understanding of the impact of the buried bottom interface on perovskite growth and phase segregation.

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