Nature Communications (Oct 2016)
Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh
Abstract
Voltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in MnxGe1−xnanomeshes with a Curie temperature above 400 K and controllable giant magnetoresistance.