Frontiers in Materials (Dec 2014)
Peculiarities of the interface between high-permittivity dielectrics and semiconductors
Abstract
Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high permittivity dielectrics (high-k) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-k are discussed in these paper and directions for further development indicated. Further progress requires better understanding of the physical phenomena appearing in stacked high-k/interfacial layer dielectrics.
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