Chemical trends of deep levels in van der Waals semiconductors

Penghong Ci; Xuezeng Tian; Jun Kang; Anthony Salazar; Kazutaka Eriguchi; Sarah Warkander; Kechao Tang; Jiaman Liu; Yabin Chen; Sefaattin Tongay; Wladek Walukiewicz; Jianwei Miao; Oscar Dubon; Junqiao Wu

doi:10.1038/s41467-020-19247-1

Nature Communications (Oct 2020)

Chemical trends of deep levels in van der Waals semiconductors

Penghong Ci,
Xuezeng Tian,
Jun Kang,
Anthony Salazar,
Kazutaka Eriguchi,
Sarah Warkander,
Kechao Tang,
Jiaman Liu,
Yabin Chen,
Sefaattin Tongay,
Wladek Walukiewicz,
Jianwei Miao,
Oscar Dubon,
Junqiao Wu

Affiliations

Penghong Ci: Department of Materials Science and Engineering, University of California
Xuezeng Tian: Department of Physics & Astronomy and California NanoSystems Institute, University of California
Jun Kang: Beijing Computational Science Research Center
Anthony Salazar: Department of Materials Science and Engineering, University of California
Kazutaka Eriguchi: Department of Materials Science and Engineering, University of California
Sarah Warkander: Department of Materials Science and Engineering, University of California
Kechao Tang: Department of Materials Science and Engineering, University of California
Jiaman Liu: Department of Materials Science and Engineering, University of California
Yabin Chen: Department of Materials Science and Engineering, University of California
Sefaattin Tongay: School for Engineering of Matter, Transport, and Energy, Arizona State University
Wladek Walukiewicz: Materials Sciences Division, Lawrence Berkeley National Laboratory
Jianwei Miao: Department of Physics & Astronomy and California NanoSystems Institute, University of California
Oscar Dubon: Department of Materials Science and Engineering, University of California
Junqiao Wu: Department of Materials Science and Engineering, University of California

DOI: https://doi.org/10.1038/s41467-020-19247-1
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 8

Abstract

Read online

The optical and electronic properties of semiconducting transition metal dichalcogenides are strongly dependent on native defects within their crystal lattice. Here, the authors use transient spectroscopy to identify defect-related deep levels in the bandgap of MoS2, WS2 and their alloys.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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