Evaluation of an un-regulated input isolated DC–DC converter using WBG devices

Abstract

The paper presents the design and analysis of an un-regulated isolated DC–DC converter using wide band gap (WBG) devices for low-voltage, high current applications. Un-regulated isolated DC–DC converter uses a passive rectifier stage at the front end to connect to the utility grid. This will have a voltage stress of 480–780 V DC at the input of the isolated DC–DC converter. For the evaluation, SiC devices are used at the primary side and GaN devices at the secondary side of the converter. Later on the conclusion, a regulated isolated DC–DC converter, which uses an active PFC at the front-end, will be recommended for having less chip area utilisation, less components and efficient magnetics as far as DC–DC converter is concerned.

Keywords

• silicon compounds
• wide band gap semiconductors
• DC-DC power convertors
• rectifiers
• gallium compounds
• power semiconductor devices
• power grids
• electricity supply industry
• GaN
• SiC
• voltage 480.0 V to 780.0 V
• active PFC
• GaN devices
• SiC devices
• utility grid
• passive rectifier stage
• unregulated isolated DC–DC converter
• wide band gap devices