The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

Liu Yanpeng; Wei Qidi; Zhang Guohao

doi:10.16157/j.issn.0258-7998.180349

Dianzi Jishu Yingyong (Oct 2018)

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

Liu Yanpeng,
Wei Qidi,
Zhang Guohao

Affiliations

Liu Yanpeng: School of Information Engineering，Guangdong University of Technology，Guangzhou 510006，China
Wei Qidi: School of Information Engineering，Guangdong University of Technology，Guangzhou 510006，China
Zhang Guohao: School of Information Engineering，Guangdong University of Technology，Guangzhou 510006，China

DOI: https://doi.org/10.16157/j.issn.0258-7998.180349
Journal volume & issue: Vol. 44, no. 10
pp. 48 – 51

Abstract

Read online

This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant improvement by employing low frequency termination. The simulation result shows that DA which operates between DC and 30 GHz has a gain of 8.5 dB and 21 dBm of output power at 1 dB gain compression and maximum PAE up to 20%.

Published in Dianzi Jishu Yingyong

ISSN: 0258-7998 (Print)
Publisher: National Computer System Engineering Research Institute of China
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: http://journal.chinaaet.com/en

About the journal

Abstract

Keywords