Silicon p-i-n Mesa-Photodiode Technology

Abstract

The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route. Reducing the number of thermal operations reduces the degree of degradation of the electro-physical characteristics of silicon during heat treatment, which also contributes to reducing the density of surface states at the SiSiO2 interface. It is proposed to etch the mesa-profile by the method of chemical-dynamic polishing using a gold masking coating. The obtained photodiodes are cheaper than serial samples made by diffusion-planar technology and have higher sensitivity.

Keywords

• silicon
• photodiode
• point defects
• dislocations
• dark current
• sensitivity