Nanoscale Research Letters (Jan 2011)

Valence band offset of wurtzite InN/SrTiO<sub>3 </sub>heterojunction measured by x-ray photoelectron spectroscopy

  • Li Zhiwei,
  • Zhang Biao,
  • Wang Jun,
  • Liu Jianming,
  • Liu Xianglin,
  • Yang Shaoyan,
  • Zhu Qinsheng,
  • Wang Zhanguo

Journal volume & issue
Vol. 6, no. 1
p. 193

Abstract

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Abstract The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.