Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-Temperature Application

Abstract

Tunneling Field-Effect Transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFET) and could overcome the physical limit, which results in the Subthreshold Swing (SS) <60mV/dec at room temperature. In this study, we compare the complementary TFET (CTFET) with complementary metal oxide semiconductor (CMOS) at low temperatures (70K) by using the Gate-All-Around (GAA) architecture. The experiment result clearly shows that the CTEFT inverter has better characteristics than the CMOS inverter in various temperatures. While operating at a fixed temperature, the CMOS inverter performs an excellent on/off ratio and SS, etc. However, when a CMOS inverter operates at varying temperatures, CMOS performs worse than CTFET. This is attributed to the influence of lattice scattering, leading to the instability of CMOS characteristics. Therefore, the CTFET inverter is suitable for operation in environments with varying temperatures, exhibiting high stability, which can be applied in space technology. The simulation tool TCAD has been used to investigate the characteristics of CMOS and CTFET at low temperatures.

Keywords

• Band-to-band tunneling (BTBT)
• CMOS
• TFET
• inverter
• gate-all-around (GAA)
• low temperature